Diodes Incorporated DMT8012LPS-13 MOSFET N沟增强型场效应管 80V 20Vgss 80A

Width: 4.9 mm

Height: 1 mm

Length: 5.8 mm

Fall Time: 3.5 ns

Rise Time: 3.8 ns

Technology: Si

Unit Weight: 96 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.9 ns

Typical Turn-Off Delay Time: 16.5 ns

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 1 V