Diodes Incorporated DSS5160U-7 双极型晶体管 BJTs - 低 VCE(SAT) PNP 表面贴装

Width: 1.3 mm

Height: 1 mm

Length: 2.15 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 340 mV