Diodes Incorporated DXTP03100CFG-7 双极晶体管 BJTs - 双极晶体管 功率中等性能晶体管 PowerDI3333-8/SWP T&R 2K

Technology: Si

Unit Weight: 30 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.07 W

DC Current Gain hFE Max: 800 at - 1 A, - 2 V

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 110 V

Continuous Collector Current: - 5 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at - 1 A, - 2 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 212 mV