Diodes Incorporated DZT951-13 双极晶体管 BJTs 1W -60V -5A

Width: 3.7 mm

Height: 1.65 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 3 W

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 370 mV