Diodes Incorporated FZT649TC 双极型晶体管 NPN 中功率

Width: 3.7 mm

Height: 1.65 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 112 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

Gain Bandwidth Product fT: 240 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 35 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 400 mV