Diodes Incorporated FZT651QTA 双极晶体管 BJTs - 中功率中性能晶体管

Technology: Si

Unit Weight: 112 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 175 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 430 mV