Diodes Incorporated FZT949TA 双极型晶体管 PNP 高电流 低饱和

Width: 3.7 mm

Height: 1.65 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 110 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 3 W

DC Current Gain hFE Max: 100

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 5.5 A

Maximum DC Collector Current: 5.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 75

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 440 mV