Diodes Incorporated MJD32C-13 双极型晶体管 BJTs 100V 3A PNP 表面贴装

Width: 6.2 mm

Height: 2.4 mm

Length: 6.8 mm

Technology: Si

Unit Weight: 330 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.1 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.2 V