Diodes Incorporated ZVN2120GTA 场效应管 N沟道 200V

Width: 3.7 mm

Height: 1.65 mm

Length: 6.7 mm

Fall Time: 12 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 112 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 320 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 10 Ohms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 1 V