Diodes Incorporated ZXMN2A01FTA MOSFET 20V N沟道 UMOS

Width: 1.4 mm

Height: 1.02 mm

Length: 3.04 mm

Fall Time: 4.62 ns

Rise Time: 5.21 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 625 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 2.49 ns

Typical Turn-Off Delay Time: 7.47 ns

Id - Continuous Drain Current: 2.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.1 S

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 700 mV