Diodes Incorporated ZXTN19100CFFTA 双极型晶体管 NPN 100V 晶体管

Width: 1.7 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 48.800 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 500

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 200 V

Continuous Collector Current: 4.5 A

Maximum DC Collector Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 170 mV