Diotec Semiconductor BC337-40 双极型晶体管 BJT，TO-92，45V，800mA，NPN

Unit Weight: 336 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV