Diotec Semiconductor BC546B 双极型晶体管 BJTs - 双极晶体管 BJT, TO-92, 65V, 100mA, NPN

Technology: Si

Unit Weight: 336 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 600 mV