Diotec Semiconductor DI006H03SQ MOSFETs MOSFET，SO-8，30V，6A，150°C，N+P

Fall Time: 8.7 ns, 13.5 ns

Rise Time: 15 ns, 4.9 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Quad

Mounting Style: SMD/SMT

Qg - Gate Charge: 11.7 nC, 11.4 nC

Number of Channels: 4 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11.2 ns, 7.5 ns

Typical Turn-Off Delay Time: 17.5 ns, 28.2 ns

Id - Continuous Drain Current: 6 A, 4.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4 S, 3.5 S

Rds On - Drain-Source Resistance: 25 mOhms, 50 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 2 V