Diotec Semiconductor DI030N03D1 MOSFET，DPAK封装，30V，30A，175°C，N型

Fall Time: 6 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 433 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Power MOSFET

Qg - Gate Charge: 17.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 26 S

Rds On - Drain-Source Resistance: 10 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V