Diotec Semiconductor DI050N06D1 MOSFET，DPAK封装，60V，50A，150℃，N型

Fall Time: 2 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 433 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 42 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13 S

Rds On - Drain-Source Resistance: 8.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V