Diotec Semiconductor DI2579N 双极型晶体管 BJT，SOT-223，700V，1000mA，NPN

Unit Weight: 200 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 20

Gain Bandwidth Product fT: 0 Hz

Emitter- Base Voltage VEBO: 9 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 700 V

Collector-Emitter Saturation Voltage: 1 V