Diotec Semiconductor DI5A7N65D1K-AQ MOSFETs MOSFET，DPAK封装，650V，5.7A，150°C，N型，AEC-Q101认证

Fall Time: 50 ns

Rise Time: 13 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 18.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 36 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 43 ns

Typical Turn-Off Delay Time: 43 ns

Id - Continuous Drain Current: 5.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8.8 S

Rds On - Drain-Source Resistance: 430 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V