Diotec Semiconductor DIF065SIC020 MOSFETs 650V TO-247-4L，N，150A，650V，20mΩ，175°C

Fall Time: 27 ns

Rise Time: 136 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 236 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 550 W

Vgs - Gate-Source Voltage: - 5 V, + 18 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 63 ns

Id - Continuous Drain Current: 150 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 42 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V