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Fall Time: 15 ns
Rise Time: 12 ns
Technology: Si
Unit Weight: 2.820 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: Power MOSFET
Qg - Gate Charge: 109 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 170 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 30 ns
Typical Turn-Off Delay Time: 71 ns
Id - Continuous Drain Current: 95 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 50 S
Rds On - Drain-Source Resistance: 6.6 mOhms
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs th - Gate-Source Threshold Voltage: 2.9 V
