快速支持
直接联系认证专家
Fall Time: 78 ns
Rise Time: 124 ns
Technology: Si
Unit Weight: 2.820 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Transistor Type: Power MOSFET
Qg - Gate Charge: 140 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 147 ns
Typical Turn-Off Delay Time: 162 ns
Id - Continuous Drain Current: 195 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 4.1 mOhms
Vds - Drain-Source Breakdown Voltage: 85 V
Vgs th - Gate-Source Threshold Voltage: 3.2 V
