Diotec Semiconductor DIW030M060 IGBT晶体管 IGBT，TO-247-3L，600V，30A，90A，0

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 150 W

Gate-Emitter Leakage Current: 1 mA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 60 A

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 60 A