Diotec Semiconductor DIW040M120 IGBT晶体管 IGBT，TO-247-3L，1200V，40A，160A，0

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 330 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 1.74 V

Continuous Collector Current at 25 C: 80 A