Diotec Semiconductor DIW050F065 IGBT晶体管 IGBT，TO-247-3L，650V，50A，300A，0

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 350 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 100 A

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 100 A