Diotec Semiconductor DIW120SIC059-AQ 碳化硅MOSFET

Fall Time: 15 ns

Rise Time: 58 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 121 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 278 W

Vgs - Gate-Source Voltage: - 4 V, + 18 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 26 ns

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 21 S

Rds On - Drain-Source Resistance: 53 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V