Diotec Semiconductor DIW170SIC049 金属氧化物半导体场效应晶体管

Fall Time: 19 ns

Rise Time: 21 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 179 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 357 W

Vgs - Gate-Source Voltage: - 4 V, + 18 V

Typical Turn-On Delay Time: 43 ns

Typical Turn-Off Delay Time: 48 ns

Id - Continuous Drain Current: 67 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 27.4 S

Rds On - Drain-Source Resistance: 49 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4 V