Diotec Semiconductor DIW170SIC070 MOSFET 1200V TO-247-4L，N型，120A，1200V，22.3mΩ，175°C

Fall Time: 42 ns

Rise Time: 140 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 80 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 416 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 60 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 19 S

Rds On - Drain-Source Resistance: 22.3 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4 V