DT Detection Technology X-CARD ME 多能量X射线探测器板 (20keV – 160keV, 128 pixels)

Sensor type : CdTe semiconductor crystals

Number of pixels : 128

Intrinsic pixel pitch : 0.8 mm

Crystal thickness : 2 mm

Counting period : 0.5 ms to 100 ms / line (step 10 μs)

Detector binning : 1x1 (0.8 mm pitch) or 2x1 (1.6 mm pitch)

Energy range : 20–160 keV

Number of energy bins : Up to 128

Linearity : ≥ 86% @ 2•106 counts/s/pix

Saturation : 5.0•106 counts/s/pix 

Energy resolution : 7.7 KeV @ 60 keV (105 counts/pix/s)

Adjacent defective pixels : 0

Non adjacent defective pixels : 3 (2.3 %)

Overall uniformity : > -10% < 5%

Detector element length : 128 pixels / 102.3 mm

Mechanical dimensions : 34 mm x 220 mm x 103.5 mm

Weight : 0.70 kg

Operational voltage and power : 48 VDC

Power consumption per module : 28 W 

X-ray tube voltage Vp range:  Up to 160 kVp

EMC compliance : EN 61326-1, EN 61000-4-2, EN 61000-4-3

RoHS compliance : Yes

Operational temperature and humidity : 0°C to +40°C, 5-95% RH non-condensing

Storage temperature : -20°C to +60°C

Datasheet