Fairchild 2N5550TAR 双极型晶体管 NPN 硅晶体管 外延型

Width: 3.93 mm

Height: 4.7 mm

Length: 4.7 mm

Technology: Si

Unit Weight: 240 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 250 mV