Fairchild 2N7002VA MOSFET 小信号 N沟道增强型场效应管

Width: 0.88 mm

Height: 0.78 mm

Length: 1.6 mm

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.85 ns

Typical Turn-Off Delay Time: 12.5 ns

Id - Continuous Drain Current: 280 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.5 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V