Fairchild BD13910S 双极型晶体管 NPN 外延硅

Width: 3.25 mm

Height: 1.5 mm

Length: 8 mm

Technology: Si

Unit Weight: 761 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 12.5 W

DC Current Gain hFE Max: 160

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV