Fairchild BSR58 JFET N型晶体管 低频/低噪声

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 mW

Drain-Source Current at Vgs=0: 80 mA

Rds On - Drain-Source Resistance: 60 Ohms

Vgs - Gate-Source Breakdown Voltage: - 40 V