Fairchild FCA20N60 高功率MOSFET

Width: 5 mm

Height: 20.1 mm

Length: 16.2 mm

Fall Time: 65 ns

Rise Time: 140 ns

Technology: Si

Unit Weight: 4.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 208 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 62 ns

Typical Turn-Off Delay Time: 230 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 190 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V