Fairchild FCPF290N80 MOSFETs SuperFET2 800V 290 毫欧

Width: 4.9 mm

Height: 16.07 mm

Length: 10.36 mm

Fall Time: 2.6 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 58 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 44 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 61 ns

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 290 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V