Fairchild FDC6321C 场效应管 SSOT-6 兼容 N-P-CH

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Fall Time: 8 ns, 9 ns

Rise Time: 8 ns, 9 ns

Technology: Si

Unit Weight: 36 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 2.3 nC, 1.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 900 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 3 ns, 7 ns

Typical Turn-Off Delay Time: 17 ns, 55 ns

Id - Continuous Drain Current: 680 mA, 460 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.45 S, 0.8 S

Rds On - Drain-Source Resistance: 450 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 650 mV, 1.5 V