Fairchild FDC6561AN MOSFET SSOT-6 N沟道 30V

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Fall Time: 10 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 36 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 3.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 900 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 95 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V