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Width: 3.3 mm
Height: 0.8 mm
Length: 3.3 mm
Technology: Si
Unit Weight: 200 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 7.3 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 31 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 16 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 8.9 S
Rds On - Drain-Source Resistance: 56 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2 V
