Fairchild FDMD86100 MOSFET 双通道 N 沟道屏蔽栅 PowerTrench MOSFET

Width: 3.3 mm

Height: 0.8 mm

Length: 3.3 mm

Fall Time: 4.1 ns

Rise Time: 4.3 ns

Technology: Si

Unit Weight: 98 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 21 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 33 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 39 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 10.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3 V