Fairchild FDMQ8203 MOSFET 双PT5 N沟道 & 双PT1 P沟道 PowerTrench

Width: 4.5 mm

Height: 0.8 mm

Length: 5 mm

Fall Time: 1.9 ns, 2.7 ns

Rise Time: 1.3 ns, 2.8 ns

Technology: Si

Unit Weight: 210 mg

Channel Mode: Enhancement

Configuration: Quad

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 5 nC, 19 nC

Number of Channels: 4 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 3.4 A, 2.6 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 110 mOhms, 190 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V, 80 V

Vgs th - Gate-Source Threshold Voltage: 3 V, 1.6 V