Fairchild FDP61N20 MOSFET 200V N沟道MOSFET

Width: 4.7 mm

Height: 16.3 mm

Length: 10.67 mm

Fall Time: 170 ns

Rise Time: 215 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 75 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 417 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 125 ns

Id - Continuous Drain Current: 61 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 44.5 S

Rds On - Drain-Source Resistance: 41 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 3 V