Fairchild FDPC8011S MOSFETs 25V 非对称 2xN沟道 MOSFET PowerTrench

Width: 3.3 mm

Height: 0.8 mm

Length: 3.3 mm

Fall Time: 2 ns, 4 ns

Rise Time: 2 ns, 5 ns

Technology: Si

Unit Weight: 192 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 19 nC, 64 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.6 W, 2 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 97 S, 231 S

Rds On - Drain-Source Resistance: 7.3 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 800 mV, 1.1 V