Fairchild FDPC8012S MOSFETs 25V 非对称双通道N沟道功率沟槽

Width: 3.3 mm

Height: 0.8 mm

Length: 3.3 mm

Fall Time: 3 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 192 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 34 ns

Id - Continuous Drain Current: 88 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 200 S

Rds On - Drain-Source Resistance: 7.5 Ohms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V