Fairchild FDS4501H MOSFET SO-8 互补 N-P-CH

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 10 ns, 25 ns

Rise Time: 5 ns, 15 ns

Technology: Si

Unit Weight: 187 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 27 nC, 21 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V, - 8 V, + 8 V

Typical Turn-On Delay Time: 15 ns, 15 ns

Typical Turn-Off Delay Time: 38 ns, 40 ns

Id - Continuous Drain Current: 9.3 A, 5.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 28 S, 16 S

Rds On - Drain-Source Resistance: 18 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V, 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 1.5 V