Fairchild FGA50S110P IGBT晶体管 1100 V, 50 A 短接阳极IGBT

Technology: Si

Unit Weight: 6.401 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 300 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: - 25 V, 25 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.1 kV

Collector-Emitter Saturation Voltage: 2.06 V

Continuous Collector Current at 25 C: 50 A