Fairchild FGAF40N60UFTU IGBT晶体管 40A/600V/ IGBT

Width: 5.7 mm

Height: 16.7 mm

Length: 15.7 mm

Technology: Si

Unit Weight: 7 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 100 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 40 A

Collector-Emitter Saturation Voltage: 3.1 V

Continuous Collector Current at 25 C: 40 A