Fairchild FGH40N60SMD IGBT晶体管 600V，40A场停止IGBT

Technology: Si

Unit Weight: 6.390 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 349 W

Gate-Emitter Leakage Current: +/- 400 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 80 A