Fairchild FJE5304D 双极型晶体管 BJTs - 硅晶体管 NPN 三极扩散平面型

Width: 3.25 mm

Height: 11 mm

Length: 8 mm

Technology: Si

Unit Weight: 761 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 30 W

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.5 V