Fairchild FJP13009H2TU 双极型晶体管 NPN 硅晶体管

Width: 4.7 mm

Height: 9.4 mm

Length: 10.1 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 700 V

Continuous Collector Current: 12 A

Maximum DC Collector Current: 12 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 3 V