Fairchild FJP5304DTU 双极型晶体管 NPN 三重扩散平面硅

Width: 4.83 mm

Height: 9.4 mm

Length: 10.67 mm

Technology: Si

Unit Weight: 1.800 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 70 W

DC Current Gain hFE Max: 40

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 700 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.5 V