Fairchild FQA8N100C MOSFET 1000V N沟道MOSFET

Width: 5 mm

Height: 20.1 mm

Length: 16.2 mm

Fall Time: 80 ns

Rise Time: 95 ns

Technology: Si

Unit Weight: 4.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 70 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 225 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 122 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 1.45 Ohms

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 3 V